MJE2955T Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W)

MJE2955T / MJE3055T
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.66
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 30 V
ICEX
Collector Cut-off
Current (VBE = 1.5V)
VCE = 70 V
TCASE = 150^oC
ICBO
Collector Cut-off
Current (IE = 0)
VCBO = 70 V
TCASE = 150^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEBO = 5 V
IC = 200 mA
VCE(sat)∗ Collector-Emitter
Sustaining Voltage
IC = 4 A
IC = 10 A
IB = 0.4 A
IB = 3.3 A
VBE(on)∗ Base-Emitter on
Voltage
IC = 4 A
VCE = 4 V
hFE DC Current Gain
IC = 4 A
IC = 10 A
VCE = 4 V
VCE = 4 V
fT
Transistor Frequency IC = 500 mA
f = 500 KHz
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
VCE = 10 V
Min.
60
20
5
2
Typ.
Max.
700
1
5
1
10
5
1.1
8
1.8
70
Unit
µA
mA
mA
mA
mA
mA
V
V
V
V
MHz
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