MJE172 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

MJE172 - MJE182
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Rthj-case Thermal Resistance Junction-case
Max
Max
83.4
10
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = rated VCBO
TCASE = 150^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 7 V
IC = 10 mA
IC = 0.5 A
IC = 1.5 A
IC = 3 A
IB = 50 mA
IB = 0.15 A
IB = 0.6 A
VBE(sat)∗ Base-Emitter on
Voltage
IC = 1.5 A
IC = 3 A
IB = 0.15 A
IB = 0.6 A
VBE∗
Base-Emitter on
Voltage
IC = 0.5 A
VCE = 1 V
hFE DC Current Gain
IC = 0.1 A
IC = 0.5 A
IC = 1.5 A
VCE = 1 V
VCE = 1 V
VCE = 1 V
fT
Transistor Frequency IC = 0.1 A
f = 10 MHz
VCE = 10 V
CCBO
Collector-base
Capacitance
VCB = 10 V
for MJE172
for MJE182
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
For PNP type voltage and current values are negative.
IE = 0
f = 0.1MHz
Min.
80
50
30
12
50
Typ.
Max.
0.1
0.1
0.1
0.3
0.9
1.7
1.5
2
1.2
250
60
40
Unit
µA
mA
µA
V
V
V
V
V
V
MHz
pF
pF
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