ITA6V1U1 Datasheet, PDF (2/5 Pages) STMicroelectronics – TRANSILTM ARRAY FOR DATALINE PROTECTION

ITA6V1U1
ABSOLUTE MAXIMUM RATINGS (T_amb = 25°C)
Symbol
Parameter
Value
Unit
P_PP
Peak pulse power dissipation (8/20µs)
Tj initial = T_amb
300
W
(see note 1)
I_PP
Peak pulse current (8/20µs) (see note 1)
Tj initial = T_amb
40
A
I²t
Wire I²t value (see note 1)
0.6
A²s
T_stg
Storage temperature range
T_j
Maximum operating junction temperature
- 55 to + 150 °C
125
°C
T_L
Maximum lead temperature for soldering during 10s
260
°C
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
ELECTRICAL CHARACTERISTICS (T_amb = 25°C)
Symbol
V_RM
V_BR
V_CL
I_RM
I_PP
αT
C
V_F
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V_RM
Peak pulse current
Voltage temperature coefficient
Junction capacitance
Forward voltage drop
%I _pp
100
50
8s
Pulse wave form 8/20 s
0
t
20 s
I
IF
V _CL VBR
V _RM
VF
IRM
I _PP
Types
IRM @ VRM VBR @ IR VCL @ IPP
max.
min.
max. 8/20µ
s
note 2
note 2
µA
V
V
mA
V
A
ITA6V1U1 ¹⁰
5
6.1
1
10
10
Note 2 : Between I/O pin and ground.
Note 3 : Between I/O pin and ground, at 0V Bias. F = 1MHz.
VCL @ IPP
max. 8/20µ
s
note 2
V
A
12
25
αT
max.
C
max.
note 3
10^-4/°C pF
4
1500
VF @ IF
max.
V
A
1.3
1
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