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HDP01-0512N Datasheet, PDF (2/6 Pages) STMicroelectronics – HARD DISK DRIVE POWER SUPPLY PROTECTION
HDP01-0512N
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
ton
Conduction time with I-PL5 = 3A DC (note1)
Top
Operating temperature range
Tj
Maximum junction temperature
Tstg
Storage temperature range
TL
Lead solder temperature (10s duration)
note 1 : I-PL5 is the current going through the 5V line (PL5)
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-t) Junction to tab
Rth (j-a) Junction to ambient (note 2)
note 2 : With 5cm2 copper (e=35µm) surface under tab.
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
I
+5V PROTECTION
ION
Value
Unit
1
s
0 to + 75
°C
125
°C
- 55 to + 150
°C
260
°C
Value
30
60
Unit
°C/W
°C/W
I
+12V PROTECTION
IA-PL5
IRM-PL5
VON-PL5
VA-PL5
VRM-PL5
VNA-PL5
IRM-PL12
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
PROTECTION OF 5 V LINE (PL5)
Symbol
Parameter
VNA-PL5
VA-PL5
IRM-PL5
IA-PL5
VON-PL5
Non activation voltage between PL5 and Gnd at IRM=100µA
Activation voltage between PL5 and Gnd
Leakage current between PL5 and Gnd at VRM =5V
Activation current between PL5 and Gnd
Voltage drop on active state at ION=3A
PROTECTION OF 12 V LINE (PL12)
Symbol
Parameter
VBR-PL12
IRM-PL12
Rd
Breakdown voltage at IR=1mA
Leakage current between PL12 and Gnd at VRM =12V
Dynamic resistance. Square pulse Ipp=3A, tp = 2.5µs
2/6
Slope = 1 / Rd
VRM-PL12
VBR-PL12
Value
Unit
Min. Typ. Max.
6.0
V
7.0 7.4
V
1
µA
10 mA
1.3
V
Value
Unit
Min. Typ. Max.
14
16
V
1
µA
2.5
Ω