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HD1750FX Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
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HD1750FX
Table 2: Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Vins
Tstg
TJ
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB= 0)
Emitter-Base Voltage (IC= 0)
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 5ms)
Total Dissipation at TC = 25 oC
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
1700
V
800
V
10
V
24
A
36
A
12
A
18
A
75
W
2500
V
-65 to 150
°C
150
°C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case
Max
1.67
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICES
IEBO
VCEO(sus)*
Collector Cut-off Current VCE = 1700 V
(VBE = 0)
VCE = 1700 V
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Collector-Emitter
Sustaining Voltage
IC = 10 mA
TC = 125 oC
800
(IB = 0 )
VEBO
Emitter-Base Voltage
(IC = 0 )
IE = 10 mA
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 12 A
VBE(sat)* Base-Emitter Saturation IC = 12 A
Voltage
hFE DC Current Gain
IC = 1 A
IC = 12 A
INDUCTIVE LOAD
IC = 12 A
ts
Storage Time
IB(on) = 1.9 A
tf
Fall Time
VCE(fly) = 1320 V
LBB(off) = 0.8 µH
INDUCTIVE LOAD
IC = 6.5 A
ts
Storage Time
IB(on) = 1.2 A
tf
Fall Time
VCE(fly) = 1220 V
LBB(off) = 0.25 µH
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
IB = 3 A
IB = 3 A
VCE = 5 V
VCE = 5 V
fh = 31250 Hz
IB(off) = -8.1 A
VBE(off) = -2.7 V
fh = 100 kHz
IB(off) = -5.85 A
VBE(off) = -2.7 V
10
0.95
30
6.5
3.1
350
1.7
180
Max.
0.2
2
10
3
1.5
9.5
3.8
500
2
250
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
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