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| HD1530JL Datasheet, PDF (2/5 Pages) STMicroelectronics – High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display | |||
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Table 2.
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
TSTG
TJ
Absolute Maximum Rating
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitte-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tP < 5ms)
Base Current
Base Peak Current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage Temperature
Max. Operating Junction Temperature
HD1530JL
Value
Unit
1500
V
700
V
10
V
26
A
40
A
10
A
20
A
200
W
-65 to 150
°C
150
°C
Table 3.
Symbol
RthJC
Thermal Data
Parameter
Thermal Resistance Junction-Case____________________Max
Value
0.625
Unit
°C/W
Table 4. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off Current
VCE = 1500V
(VBE = 0)
VCE = 1500V____TC = 125°C
IEBO Emitter Cut-off Current
VEB = 5V
(IC = 0)
VCEO(SUS) Collector-Emitter
IC = 10mA
700
Note: 1 Susting Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IE = 10mA
10
VCE(sat) Collector-Emitter Saturation Voltage IC = 13A _____ IB = 3.25A
0.2 mA
2
mA
10
μA
V
V
2.5
V
Note: 1
VBE(sat) Base-Emitter Saturation Voltage
IC = 13A _____ IB = 3.25A
1
1.5
V
Note: 1
hFE DC Current Gain
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 1A _____ VCE = 5V
IC = 13A ____ VCE = 5V
28
5
8
IC = 12A ____ _ fh = 32KHz
IB(on) = 1.5A ___ IB(off) = -6.1A
3.3
μs
240
ns
IC = 12A _____ fh = 48KHz
IB(on) = 2A ____ IB(off) = -6.7A
2.8
μs
200
ns
IC = 6.5A _____ fh = 100KHz
IB(on) = 0.9A ___ IB(off) = -4.6A
1.5
μs
110
ns
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
2/5
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