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| HD1520FX Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION CRT DISPLAYS | |||
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HD1520FX
Symbol
Tstg
TJ
Parameter
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
-65 to 150
°C
150
°C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case
Max
1.95
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICES
IEBO
VCEO(sus)*
Collector Cut-off Current VCE = 1500 V
(VBE = 0)
VCE = 1500 V
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Collector-Emitter
Sustaining Voltage
IC = 100 mA
TC = 125 oC
700
(IB = 0 )
VEBO
Emitter-Base Voltage
(IC = 0 )
IE = 10 mA
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 9 A
VBE(sat)* Base-Emitter Saturation IC = 9 A
Voltage
hFE DC Current Gain
IC = 1 A
IC = 9 A
IC = 9 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 9 A
IB(on) = 1.3 A
LBB(on) = 1.9 µH
VCE(fly) = 1040 V
* Pulsed: Pulsed duration = 300 ms, duty cycle ⤠1.5 %.
10
IB = 1.8 A
IB = 1.8 A
VCE = 5 V
26
VCE = 1 V
VCE = 5 V
5
5.5
fh = 31250 Hz
IB(off) = -4.2 A
3.2
VBE(off) = -2.7 V
220
Max.
0.2
2
10
3
1.3
9.5
4
300
oC/W
Unit
mA
mA
µA
V
V
V
V
µs
ns
2/8
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