ESM765PI-800 Datasheet, PDF (2/4 Pages) STMicroelectronics – RECOVERY RECTIFIER DIODES

ESM765PI-800
THERMAL RESISTANCES
Symbol
Rth(j-c)
Junction to case
Parameter
Value
3.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Test conditions
IR *
Reverse leakage current
Tj = 25°C VR = VRRM
Tj = 100°C
VF ** ^{Forward voltage drop}
Tj = 25°C
Tj = 100°C
IF = 10 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 1.2 x IF(AV) + 0.015 x IF2(RMS)
VF = 1.2 + 0.015 IF
Min. Typ. Max. Unit
20 mA
1
mA
1.4
V
1.35
RECOVERY CHARACTERISTICS
Symbol
trr
Qrr
Tj = 25°C
Tj = 25°C
Test conditions
Min. Typ. Max. Unit
IF = 1A dIF/dt = - 15A/µs VR = 30V
300 ns
IF = 10A dIF/dt = - 50A/µs VR = 200V
2.3
µC
Fig. 1: Low frequency power losses versus Fig. 2: Peak current versus form factor.
average current.
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