ESM6045AV_03 Datasheet, PDF (2/7 Pages) STMicroelectronics – NPN DARLINGTON POWER MODULE

ESM6045AV
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.5
0.05
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 ^oC
Tj = 100 ^oC
IEBO # Emitter Cut-off Current
(IC = 0)
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
hFE∗ DC Current Gain
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 60 A VCE = 5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 50 A
IC = 50 A
IC = 60 A
IC = 60 A
IB = 1 A
IB = 1 A
IB = 2.4 A
IB = 2.4 A
Tj = 100 ^oC
Tj = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 60 A IB = 2.4 A
IC = 60 A IB = 2.4 A Tj = 100 ^oC
diC/dt
VCE(3
µs)••
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 3.6 A Tj = 100 ^oC
VCC = 300 V RC = 5 Ω
IB1 = 3.6 A Tj = 100 ^oC
Min. Typ.
450
150
1.2
1.6
1.3
1.55
2.1
2.15
450 500
4
Max.
1.5
22
1
15
1
2
2
3
7
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
VCE(5 Collector-Emitter
µs)•• Dynamic Voltage
VCC = 300 V RC = 5 Ω
IB1 = 3.6 A Tj = 100 ^oC
2.5
4
V
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 60 A VCC = 50 V
VBB = -5 V RBB = 0.3 Ω
Vclamp = 450 V IB1 = 2.4 A
L = 0.04 mH Tj = 100 ^oC
VCEW Maximum Collector
ICWoff = 72 A IB1 = 2.4 A
Emitter Voltage
VBB = -5 V VCC = 50 V
Without Snubber
L = 35 µH RBB = 0.3 Ω
Tj = 125 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
4.6
6
µs
0.4
0.6
µs
1.2
2
µs
450
V
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