ESM5045DV_03 Datasheet, PDF (2/8 Pages) STMicroelectronics – NPN DARLINGTON POWER MODULE

ESM5045DV
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.71
1.2
0.05
o_C/W
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 ^oC
Tj = 100 ^oC
IEBO # Emitter Cut-off Current
(IC = 0)
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
hFE∗ DC Current Gain
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 50 A VCE = 5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 35 A
IC = 35 A
IC = 50 A
IC = 50 A
IB = 0.7 A
IB = 0.7 A
IB = 2.8 A
IB = 2.8 A
Tj = 100 ^oC
Tj = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 50 A IB = 2.8 A
IC = 50 A IB = 2.8 A Tj = 100 ^oC
diC/dt
VCE(3
µs)••
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 1.05 A Tj = 100 ^oC
VCC = 300 V RC = 8.5 Ω
IB1 = 1.05 A Tj = 100 ^oC
Min. Typ.
450
150
1.2
1.4
1.4
1.6
2.3
2.3
300 400
4.5
Max.
1.5
20
1
13
1
2
2
3
8
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
VCE(5 Collector-Emitter
µs)•• Dynamic Voltage
VCC = 300 V RC = 8.5 Ω
IB1 = 1.05 A Tj = 100 ^oC
2.5 4.5
V
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 35A VCC = 50 V
VBB = -5 V
RBB = 0.6 Ω
Vclamp = 450 V IB1 = 0.7 A
L = 0.07 mH Tj = 100 ^oC
VCEW
VF∗
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
ICWoff = 60 A IB1 = 2.8 A
VBB = -5 V VCC = 50 V
L = 42 µH RBB = 0.6 Ω
Tj = 125 ^oC
IF = 50 A Tj = 100 ^oC
IRM Reverse Recovery
VCC = 200 V IF = 50 A
Current
diF/dt = -300 A/µs L < 0.05 µH
Tj = 100 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
VF = 1.5 + 0.0055 IF P = 1.5 IF(AV) + 0.0055 I^2F(RMS)
# See test circuits in databook introduction
3.2
5
µs
0.25 0.5
µs
0.75 1.5
µs
450
V
1.5 1.8
V
32
38
A
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