ESM2012DV_03 Datasheet, PDF (2/8 Pages) STMicroelectronics – NPN DARLINGTON POWER MODULE

ESM2012DV
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.7
0.9
0.05
o_C/W
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 ^oC
Tj = 100 ^oC
IEBO # Emitter Cut-off Current
(IC = 0)
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
hFE∗ DC Current Gain
VEB = 5 V
IC = 5 A L = 15 mH
Vclamp = 125 V
IC = 100 A VCE = 5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 70 A
IC = 70 A
IC = 100 A
IC = 100 A
IB = 0.25 A
IB = 0.25 A Tj = 100 ^oC
IB = 1 A
IB = 1 A Tj = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 100 A IB = 1 A
IC = 100 A IB = 1 A Tj = 100 ^oC
diC/dt
VCE(3
µs)••
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
VCC = 90 V RC = 0 tp = 3 µs
IB1 = 0.5 A Tj = 100 ^oC
VCC = 90 V RC = 1.3 Ω
IB1 = 0.5 A Tj = 100 ^oC
Min.
125
200
Typ.
1200
1.25
1.35
1.5
1.65
2.3
2.35
230
2
Max.
1.5
10
1
7
1
1.5
2
3
3
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
VCE(5 Collector-Emitter
µs)•• Dynamic Voltage
VCC = 90 V RC = 1.3 Ω
IB1 = 0.5 A Tj = 100 ^oC
1.8 2.5
V
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 70 A
VBB = -5 V
Vclamp = 125 V
L = 60 µH
VCC = 90 V
RBB = Ω
IB1 = 0.25 A
Tj = 100 ^oC
VCEW
VF∗
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
ICWoff = 120 A IB1 = 1A
VBB = -5 V
VCC = 90 V
L = 60 µH
Tj = 125 ^oC
RBB = 1.25 Ω
IF = 100 A Tj = 100 ^oC
IRM Reverse Recovery
VCC = 125 V
IF = 100 A
Current
diF/dt = -200 A/µs L < 0.05 µH
Tj = 100 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 0.66 + 0.0034 IF P = 0.66 IF(AV) + 0.0034 I^2F(RMS)
0.9
2
µs
0.15 0.3
µs
0.3
0.6
µs
125
V
0.92
1
V
10
14
A
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