E-L6569 Datasheet, PDF (2/13 Pages) STMicroelectronics – HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

L6569 L6569A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I_S (*) Supply Current
25
mA
V_CF
Oscillator Resistor Voltage
18
V
V_LVG Low Side Switch Gate Output
14.6
V
V_OUT High Side Switch Source Output
-1 to V_BOOT - 18
V
V_HVG High Side Switch Gate Output
-1 to V_BOOT
V
V_BOOT Floating Supply Voltage
618
V
V_BOOT/OUT Floating Supply vs OUT Voltage
18
V
dV_BOOT/dt VBOOT Slew Rate (Repetitive)
± 50
V/ns
dV_OUT/dt VOUT Slew Rate (Repetitive)
± 50
V/ns
T_stg
Storage Temperature
-40 to 150
°C
T_j
Junction Temperature
-40 to 150
°C
T_amb
Ambient Temperature (Operative)
-40 to 125
°C
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im-
pedance power source.
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
Symbol
Parameter
R_{th j-amb} Thermal Resistance Junction-Ambient Max
Minidip
100
SO8
150
Unit
°C/W
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V_S
Supply Voltage
V_BOOT Floating Supply Voltage
V_OUT High Side Switch Source Output
f_out
Oscillation Frequency
Min.
10
-
-1
Max.
V_CL
500
V_BOOT -V_CL
200
Unit
V
V
V
kHz
PIN CONNECTION
V_S
RF
C_F
GND
1
8
2
7
3
6
4
5
D94IN059
BOOT
HVG
OUT
LVG
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