DALC112S1 Datasheet, PDF (2/3 Pages) STMicroelectronics – LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

DALC112S1
TYPICAL APPLICATION
Vcc
DALC112S1
ABSOLUTE MAXIMUM RATINGS (T_amb =25°C).
Symbol
Parameter
V_RRM
Peak reverse voltage per diode
T_stg
Storage temperature range
Tj
Maximum junction temperature
Value
Unit
18
V
-55 to + 150
°C
150
°C
ELECTRICAL CHARACTERISTICS (T_amb = 25°C).
Symbol
VF
IR
C
Parameter
Forward voltage
Reverse leakage current per diode
Input capacitance between Line and GND
V_cc = 5 V, V_RMS = 30 mV, F = 1 MHz
(see figure 1 below)
IF = 50 mA
VR = 15 V
Typ.
Max.
1.3
2
Unit
V
µA
7
pF
Fig 1 : Input capacitance measurement
REF2
I/O
G
V_CC
REF1
+VCC connected between REF1 and REF2
Input applied :
Vcc = 5V, VRMS = 30 mV, F = 1 MHz
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