BYT30PI-1000 Datasheet, PDF (2/5 Pages) STMicroelectronics – FAST RECOVERY RECTIFIER DIODE

BYT 30PI-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbo l
I_R
V_F
T_j = 25°C
T_j = 100°C
T_j = 25°C
T_j = 100°C
Test Conditions
V_R = V_RRM
I_F = 30A
Min. Typ. Max. Unit
100 µA
5 mA
1.9
V
1.8
RECOVERY CHARACTERISTICS
Symbol
t_rr
T_j = 25°C
Test Conditions
I_F = 1A
di_F/dt = - 15A/µs
I_F = 0.5A I_R = 1A
V_R = 30V
I_rr = 0.25A
Min. Typ. Max. Unit
165 _ns
70
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min. Typ. Max. Unit
t_IRM
di_F/dt = - 120A/µs
V_CC = 200 V I_F = 30A
L_p ≤ 0.05µH T_j = 100°C
di_F/dt = - 240A/µs
See figure 11
I_RM
di_F/dt = -120A/µs
di_F/dt = - 240A/µs
200 ns
120
19.5 A
22
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C = ^VRP
V_CC
T_j = 100°C
diF/dt = - 30A/µs
Test Conditions
V_CC = 200V
Lp = 5µH
I_F = I_{F (AV)}
See figure 12
Min. Typ. Max. Unit
4.5
To evaluate the conduction losses use the following equations:
VF = 1.47 + 0.010 IF
P = 1.47 x IF(AV) + 0.010 IF2(RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
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