BUX98C Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

BUX98C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.7
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
Collector Cut-off
Current (RBE = 10 Ω)
ICES Collector Cut-off
Current (VBE = 0 )
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VBE(sat)∗
ton
ts
tf
Base-Emitter
Saturation Voltage
Turn-on Time
Storage Time
Fall Time
VCE = VCES
VCE = VCES
VCE = VCES
VCE = VCES
VCE = VCEO
Tcase = 125 ^oC
Tcase = 125 ^oC
VCB = 5 V
IC = 100 mA
IC = 12 A
IC = 16 A
IC = 20 A
IB = 3 A
IB = 5 A
IB = 8 A
IC = 12 A
IC = 20 A
IB = 3 A
IB = 8 A
RESISTIVE LOAD
VCC = 250 V IC = 12 A
IB1 = - IB2 = 3 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
Min. Typ.
700
0.5
1.5
0.2
Max.
1
8
1
6
2
2
1.5
2
3
1.6
2
1
3
0.8
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
2/4