BUV27 Datasheet, PDF (2/4 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

BUV27
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.76
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
ICER
ICEX
Parameter
Collector Cut-off
Current (RBE = 50Ω)
Collector Cut-off
Current
Test Conditions
VCE = 240V Tc = 125^oC
VCE = 240V VBE = -1.5V Tc = 125^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEB = 5 V
IC = 0.2 A
L = 25mH
VEBO
VCE(sat)∗
Emitter-Base Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IE = 50mA
IC = 4A
IC = 8A
IB = 0.4A
IB = 0.8A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 8A
IB = 0.8A
RESISTIVE LOAD
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
VCC = 90V
VBE = - 6V
RBB = 3.75Ω
IC = 8A
IB1 = 0.8A
INDUCTIVE LOAD
ts
Storage time
tf
Fall Time
ts
Storage Time
tf
Fall Time
VCC = 90V
IB1 = 0.8A
LB = 1µH
VCC = 90V
IB1 = 0.8A
LB = 1µH
∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 %
IC = 8A
VBE = - 5V
IC = 8 A
VBE = - 5V
Tj = 125^oC
Min.
120
7
Typ.
0.4
0.5
0.12
0.6
0.04
Max.
3
1
1
30
0.7
1.5
2
0.8
1.2
0.25
2
0.15
Unit
mA
mA
mA
V
V
V
V
V
ms
µs
µs
µs
µs
µs
µs
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