BUH615D Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH615D
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.3
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 ^oC
IEBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 6 A
IB = 2.5 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 6 A
IB = 2.5 A
hFE∗ DC Current Gain
IC = 6 A VCE = 5 V
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
VCC = 400 V IC = 6 A
IB1 = 1.5 A
IB2 = -3 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 6 A
f = 15625 Hz
IB1 = 1.25 A IB2 = -3 A
Vceflyback
=
1050
sin^{}₁^π₀
10^{6}

t
V
Min. Typ.
4
2.7
190
2.3
350
Max.
0.2
2
300
1.5
1.3
9
3.9
280
Unit
mA
mA
mA
V
V
µs
ns
µs
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 6 A
f = 31250 Hz
IB1 = 1.5 A
IB2 = -3 A
Vceflyback
=
1200
sin^{π}₅
10^{6}

t
V
2.3
µs
200
ns
Vf
Diode Forward Voltage IF = 5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2
V
2/4