BUH515 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH515
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2.5
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
I_CES Collector Cut-off
Current (VBE = 0)
V_CE = 1500 V
VCE = 1500 V
Tj = 125 ^oC
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(sus )∗ Collector-Emit ter
Sustaining Voltage
(IB = 0)
V_EBO
Emitter-Base Voltage
(IC = 0)
V_CE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
I_E = 10 mA
I_C = 5 A I_B = 1.25 A
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 5 A IB = 1.25 A
hF E∗ DC Current Gain
IC = 5 A VCE = 5 V
I_C = 5 A V_CE = 5 V T_j = 100 ^oC
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
V_CC = 400 V I_C = 5 A
IB1 = 1.25 A IB2 = 2.5 A
INDUCTIVE LO AD
ts
Storage Time
t_f
Fall Time
I_C = 5 A
f = 15625 Hz
IB1 = 1.25 A IB2 = -1.5 A
Vc eflybac k
=
1050
sin
π
 ₅
10^{6}

t
V
Min. Typ.
700
10
6
4
2.7
190
2.3
350
Max.
0.2
2
100
1.5
1.3
12
3.9
280
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
INDUCTIVE LO AD
t_s
Storage Time
t_f
Fall Time
I_C = 5A
f = 31250 Hz
I_B1 = 1.25 A I_B2 = -1.5 A
Vc eflybac k
=
1200
sin
π
 ₅
10^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2.3
µs
200
ns
Safe Operating Area
Thermal Impedance
2/7