BUH315D Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH315D
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2.8
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
S ymb ol
I_CES
I_EBO
V_{CE(sat )}∗
V_{BE(s at)}∗
h_{F E}∗
ts
t_f
ts
t_f
P a ra m et er
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Saturation Voltage
Base-Emitt er
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
Test Conditions
V_CE = 1500 V
V_EB = 5 V
I_C = 3 A
I_B = 1 A
I_C = 3 A
I_B = 1 A
I_C = 3 A V_CE = 5 V
IC = 3 A VCE = 5 V Tj = 100 ^oC
V_CC = 400 V
IB1 = 1 A
I_C = 3 A
IB2 = -1.5 A
I_C = 3 A
f = 15625 Hz
IB1 = 1 A
IB2 = 1.5 A
V_{c eflybac k}
=
1050
sin
π
 ₅
10^{6}

t
V
Min. Typ.
4
2.5
1.8
200
2.7
350
Max.
200
300
1.5
1.5
9
2.7
300
Unit
µA
mA
V
V
µs
ns
µs
ns
VF
Diode Forward Voltage IF = 3 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2.5
V
Safe Operating Area
Thermal Impedance
2/7