BUH313 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

BUH313
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2 .8
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symbol
I_CES
IEBO
VCEO(s us)
V_EBO
V_CE(sat)∗
V_{BE(sat )}∗
hFE∗
t_s
t_f
t_s
tf
Parameter
Collector Cut-off
Current (V_BE = 0)
Emitter Cut- off Current
(I_C = 0)
Col lec t or-E mit t er
Sustaining Voltage
Emitter-Base Voltage
(IC = 0)
Col lec t or-E mit t er
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
T est Con ditio ns
V_CE = 1300 V
V_CE = 1300 V T_j = 125 ^oC
VEB = 5 V
IC = 100 mA
I_E = 10 mA
I_C = 3 A I_B = 0.75 A
I_C = 3 A I_B = 0.75 A
IC = 3 A VCE = 5 V
I_C = 3 A V_CE = 5 V T_j = 100 ^oC
V_CC = 400 V I_C = 3 A
I_B1 = 0.75 A I_B2 = 1.5 A
IC = 3 A
f = 15625 Hz
I_B1 = 0.75 A I_B2 = -1.5 A
V_{cef ly back}
=
1050
sin
π
 ₅
10^{6}

t
V
Min. Typ.
600
10
5.5
3.5
1.6
110
3.5
340
Max.
1
2
100
1 .5
1 .3
2 .4
200
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 3 A
f = 31250 Hz
IB1 = 0.75 A IB2 = -1.5 A
Vcef ly back
=
1200
sin
π
 ₅
10^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
3.5
µs
270
ns
Safe Operating Area
Thermal Impedance
2/7