BUH1215 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH1215
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
0 .6 3
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
I_CES Collector Cut-off
Current (VBE = 0)
V_CE = 1500 V
VCE = 1500 V
Tj = 125 ^oC
IEBO
VCEO(sus)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
VEB = 5 V
IC = 100 mA
V_EBO
V_{CE(sat )}∗
Emitter-Base Voltage
(I_C = 0)
Collector-Emitter
Saturation Voltage
I_E = 10 mA
I_C = 12 A
I_B = 2.4 A
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = 12 A
I_B = 2.4 A
h_{F E}∗ DC Current Gain
I_C = 12 A V_CE = 5 V
IC = 12 A VCE = 5 V Tj = 100 ^oC
RESISTIVE LOAD
t_s
Storage Time
tf
Fall Time
VCC = 400 V
I_B1 = 2 A
IC = 12 A
I_B2 = -6 A
INDUCTIVE LO AD
t_s
Storage Time
tf
Fall Time
IC = 12 A
f = 31250 Hz
I_B1 = 2 A
I_B2 = -1.5 A
Vc eflybac k
=
1050
sin
π
 ₅
10^{6}

t
V
Min. Typ.
700
10
7
10
5
1.5
110
4
220
Max.
0.2
2
100
1.5
1.5
14
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
INDUCTIVE LO AD
t_s
Storage Time
t_f
Fall Time
IC = 6 A
f = 64 KHz
I_B1 = 1 A
V_BE(off) = -2 A
V_{c eflybac k}
=
1200
sin
π
 ₅
10^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
3.5
µs
180
ns
Safe Operating Area
Thermal Impedance
2/7