BUH1015HI Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH1015HI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.8
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 ^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IE = 10 mA
IC = 10 A IB = 2 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 10 A IB = 2 A
hFE∗ DC Current Gain
IC = 10 A VCE = 5 V
IC = 10 A VCE = 5 V Tj = 100 ^oC
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
VCC = 400 V IC = 10 A
IB1 = 2 A
IB2= -6 A
INDUCTIVE LOAD
IC = 10 A
f = 31250 Hz
ts
Storage Time
IB1 = 2 A
IB2 = -6 A
tf
Fall Time
Vceflyback
=
1200
sin^{π}₅
10^{6}

t
V
INDUCTIVE LOAD
IC = 6 A
f = 64 KHz
ts
Storage Time
IB1 = 1 A
tf
Fall Time
Vbeoff = - 2 V
Vceflyback
=
1100
sin^{π}₅
10^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
700
10
7
10
5
1.5
110
4
220
3.7
200
Max.
0.2
2
100
1.5
1.5
14
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
µs
ns
2/7