BUH1015 Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH1015/BUH1015HI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
TO-218 ISOWATT218
Max 0.78
1 .8
o _{C /W}
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
I_CES Collect or Cut-off
Current (V_BE = 0)
V_CE = 1500 V
V_CE = 1500 V T_j = 125 ^oC
IEBO Emitt er Cut-off Current
(IC = 0)
V_{CEO(sus )}∗ Collect or-Emitter
Sustaining Voltage
(I_B = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
V_CE(sat)∗ Collect or-Emitter
Saturation Voltage
VEB = 5 V
I_C = 100 mA
IE = 10 mA
I_C = 10 A I_B = 2 A
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = 10 A I_B = 2 A
hFE∗ DC Current G ain
IC = 10 A VCE = 5 V
I_C = 10 A V_CE = 5 V T_j = 100 ^oC
RESISTIVE LOAD
t_s
Storage Time
t_f
Fall Time
V_CC = 400 V I_C = 10 A
I_B1 = 2 A
I_B2= -6 A
INDUCTIVE LOAD
IC = 10 A
f = 31250 Hz
ts
Storage Time
IB1 = 2 A
IB2 = -6 A
tf
Fall Time
V_{c eflybac k}
=
1200
s i n^{ π}₅
1 0^{6}

t
V
INDUCTIVE LOAD
I_C = 6 A
f = 64 KHz
ts
Storage Time
IB1 = 1 A
tf
Fall Time
Vbeoff = - 2 V
V_{c eflybac k}
=
1100
s i n^{ π}₅
1 0^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
700
10
7
10
5
1.5
110
4
220
3.7
200
M a x.
0.2
2
100
1.5
1.5
14
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
µs
ns
Safe Operating Area For TO-218
Safe Operating Area For ISOWATT218
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