BUF460AV_03 Datasheet, PDF (2/7 Pages) STMicroelectronics – NPN TRANSISTOR POWER MODULE

BUF460AV
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.41
0.05
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
ICEV
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -1.5V)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 ^oC
Tj = 100 ^oC
IEBO
VCEO(sus)*
hFE∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
(IB = 0)
DC Current Gain
VEB = 5 V
IC = 0.2 A
L = 25 mH
Vclamp = 450 V
IC = 60 A VCE = 5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 30 A
IC = 30 A
IC = 60 A
IC = 60 A
IB = 3 A
IB = 3 A Tj = 100 ^oC
IB = 12 A
IB = 12 A Tj = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 12 A
IB = 12 A Tj = 100 ^oC
diC/dt Rate of Rise of
On-state Collector
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 18 A
Tj = 100 ^oC
VCE(3 µs)• Collector-Emitter
Dynamic Voltage
VCC = 300 V
IB1 = 18 A
RC = 30 Ω
Tj = 100 ^oC
VCE(5 µs)• Collector-Emitter
Dynamic Voltage
VCC = 300 V
IB1 = 18 A
RC = 30 Ω
Tj = 100 ^oC
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 30 A
VCC = 50 V
VBB = -5 V
RBB = 0.2 Ω
Vclamp = 400 V IB1 = 3 A
L = 25 µH
Tj = 100 ^oC
VCEW Maximum Collector
ICWoff = 80 A
Emitter Voltage
VBB = -5 V
Without Snubber
L = 80 µH
Tj = 125 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 16 A
VCC = 50 V
RBB = 0.2 Ω
Min. Typ.
450
15
0.35
0.5
1.1
150
4
2
4.5
0.1
0.3
400
Max.
0.2
2
0.2
2
1
2
2
1.5
6
3
5
0.2
5
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
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