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BUF410A_08 Datasheet, PDF (2/9 Pages) STMicroelectronics – High voltage fast-switching NPN power transistor
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
TJ
Collector-emitter voltage (VBE = -1.5 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
BUF410A
Value
Unit
1000
V
450
V
7
V
15
A
30
A
3
A
4.5
A
125
W
-65 to 150
°C
150
°C
Value
1
Unit
°C/W
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