BU810_00 Datasheet, PDF (2/4 Pages) STMicroelectronics – MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR

BU810
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.66
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO∗
Emitter Cut-off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE = 600 V
VCE = 400 V
VEB = 5 V
IC = 0.1 A
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
IC = 7 A
IB = 20 mA
IB = 200 mA
IB = 0.7 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
IB = 20 mA
IB = 200 mA
VF
Diode Forward Voltage IF = 7 A
Min. Typ.
400
Max.
200
1
150
2
2.5
3
2.2
3
3
Unit
µA
mA
mA
V
V
V
V
V
V
V
RESISTIVE SWITCHING TIMES
Symbol
ton
ts
tf
Parameter
Turn-on Time
Storage Time
Fall Time
Test Conditions
VClamp = 250V IC = 2A IB1 = 20mA
VBE(off) = -5 V
Min.
Typ.
Max.
0.6
1.5
0.5
Unit
µs
µs
µs
INDUCTIVE SWITCHING TIMES
Symbol
Parameter
Test Conditions
ts
Storage Time
tf
Fall Time
VClamp = 250V IC = 2A IB1 = 20mA
VBE(off) = -5 V L = 500µH
ts
Storage Time
VClamp = 250V
tf
Fall Time
VBE(off) = -5 V
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
IC = 7A IB1 = 0.7A
L = 500µH
Min.
Typ.
Max.
1.5
0.4
1.5
0.4
Unit
µs
µs
µs
µs
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