BU808DFP Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

BU808DFP
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2 .9 8
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
I_CES
I_EBO
V_{CE(sat )}∗
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Saturation Voltage
V_CE = 1400 V
V_EB = 5 V
I_C = 5 A
I_B = 0.5 A
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = 5 A
I_B = 0.5 A
h_{F E}∗ DC Current Gain
I_C = 5 A
IC = 5 A
V_CE = 5 V
VCE = 5 V Tj = 100 ^oC
INDUCTIVE LO AD
ts
Storage Time
t_f
Fall Time
V_CC = 150 V
IB1 = 0.5 A
I_C = 5 A
VBEoff = -5 V
INDUCTIVE LO AD
ts
Storage Time
t_f
Fall Time
V_CC = 150 V
IB1 = 0.5 A
T_j = 100 ^oC
I_C = 5 A
VBEoff = -5 V
VF
Diode Forward Voltage IF = 5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
60
20
Typ .
2
0.8
Max.
400
100
1.6
2.1
230
3
0.8
3
Unit
µA
mA
V
V
µs
µs
µs
µs
V
Safe Operating Area
Thermal Impedance
2/7