BU505 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon diffused power transistors

BU505
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.67
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = VCES
VCE = VCES
Tcase = 125^oC
IEBO
VCEO(sus)
Emitter Cut-off Current
(IC = 0)
Collector-emitter
Sustaining Voltage
VEB = 5 V
IC = 100 mA
L = 25mH
VCE(sat)∗ Collector-emitter
Saturation Voltage
IC = 2 A
IB = 0.9 A
VBE(sat)∗ Base-emitter
Saturation Voltage
IC = 2 A
IB = 0.9 A
Is/b
Second Breakdown
Current
VCE = 120 V
t = 200 µs
ts
Storage Time
VClamp = 250V
IB1 = 0.7 A
Rbb = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
IC = 2 A
Vbe(off) = -5V
L = 200µH
Min. Typ.
700
2
2
350
Max.
0.15
1
1
5
1.3
Unit
mA
mA
mA
V
V
V
A
µs
ns
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