BU407 Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BU407
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE =330 V
VCE =200 V
VCE =200 V
Tcase = 100^oC
IEBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-emitter
Saturation Voltage
VEB = 6 V
IC = 5 A
IB = 0.5 A
VBE(sat)∗ Base-emitter
Saturation Voltage
IC = 5 A
fT
Transition-Frequency IC = 1 A
f = 1 MHz
VCE = 5 V
toff∗∗ Turn-off Time
IC = 5 A
IBend = 0.5 A
Is/b
Second Breakdown
Collector Current
VCE = 40 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
t = 10 ms
Min. Typ.
10
4
Max.
5
100
1
1
1
1.2
16
0.75
Unit
mA
µA
mA
mA
V
V
MHz
µs
A
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