BU326A Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

BU326A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.33
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current VCE = 900 V
(VBE = 0)
VCE = 900 V Tc = 125 ^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage(IB =
0)
VEB = 10 V
IC = 100 mA
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 2.5 A
IC = 4 A
IB = 0.5 A
IB = 1.25 A
VBE(sat)∗
hFE∗
Base-Emitter Saturation
Voltage
DC Current Gain
IC = 2.5 A
IC = 4 A
IC = 1 A
IB = 0.5 A
IB = 1.25 A
VCE = 5 V
ton
Turn-on Time
ts
Storage Time
IC = 2.5 A
VCC = 250 V
IC = 2.5 A
IB2 = -1A A
IB1 = 0.5 A
IB1 = 0.5 A
VCC = 250 V
tf
Fall Time
IC = 2.5 A
IB2 = -1A A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 0.5 A
VCC = 250 V
Min. Typ.
400
25
Max.
1
2
10
1.5
3
1.4
1.6
0.5
3.5
0.5
Unit
mA
mA
mA
V
V
V
V
µs
µs
µs
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