BTA41A Datasheet, PDF (2/5 Pages) STMicroelectronics – STANDARD TRIACS

BTA41 A/B / BTB41 B
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a) Junction to ambient
50
°C/W
Rth (j-c) DC Junction to case for DC
BTA
1.2
°C/W
BTB
0.8
Rth (j-c) AC Junction to case for 360° conduction angle
BTA
( F= 50 Hz)
BTB
0.9
°C/W
0.6
GATE CHARACTERISTICS (maximum values)
PG _(AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
VGM = 16V (tp = 20 µs).
Symbol
Test Conditions
IGT
VD=12V (DC) RL=33Ω
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 60A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Quadrant
Suffix
Unit
A
B
Tj=25°C
I-II-III
MAX 100
50
mA
IV
MAX 150 100
Tj=25°C
I-II-III-IV MAX
1.5
V
Tj=125°C I-II-III-IV MIN
0.2
V
Tj=25°C
I-II-III-IV TYP
2.5
µs
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-III-IV
II
TYP
MAX
MAX
MAX
MAX
MIN
70
60
200 180
100
80
1.8
0.01
6
250 250
mA
mA
V
mA
V/µs
(dV/dt)c * (dI/dt)c = 18A/ms
(dI/dt)c = 20A/ms
BTA
BTB
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
10
V/µs
2/5