BFX34 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor

BFX34
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-amb
Max
35
Max
200
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
IEBO
V(B
R
)C
∗
BO
V
C
EO(sus
∗
)
VE
∗
BO
Emitter Cut-off Current
(IC = 0)
Collector-base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Sustaining Voltage
(IB = 0)
Emitter-base Voltage
(IC = 0)
VCE(sat)^∗ Collector-Emitter
Saturation Voltage
V
∗
BE(sat)
Base-Emitter
Saturation Voltage
hFE^∗ DC Current Gain
f
∗
T
Transition Frequency
VCE = 60 V
VEB = 4 V
IC = 5 mA
IC = 100 mA
IE = 1 mA
IC = 5 A
IC = 5 A
IC = 1 A
IC = 1.5 A
IC = 2 A
IC = 0.5 A
f = 20 MHz
IB = 0.5 A
IB = -0.5 A
VCE = 2 V
VCE = 0.6 V
VCE = 2 V
VCE = 5 V
CEBO
Emitter-base
Capacitance
IC = 0.5 A
f = 1 MHz
VEB = 5 V
CCBO
Collector-base
Capacitance
IE = 0
f = 1 MHz
VCB = 10 V
ton
Turn-on Time
ton
Turn-on Time
IC = -0.5 A
VCC = -20 V
IB1 = -IB2 = -50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
Typ.
0.02
0.05
120
60
6
0.4
1.3
100
75
40
80
70 100
300
40
0.6
0.6
Max.
10
10
1
1.6
150
500
100
0.25
1.2
Unit
µA
µA
V
V
V
V
V
MHz
pF
pF
µs
µs
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