BDY90 Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BDY90
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
o_C/W
Symbol
Parameter
Test Conditions
ICBO
ICEV
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (VBE = -1.5V)
VCE = VCBO
VCE = VCEV
Tcase = 150 ^oC
VCE = VCEV
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-emitter
Saturation Voltage
VEB = 6 V
IC = 100 mA
IC = 5 A
IC = 10 A
IB = 0.5 A
IB = 1 A
VBE(sat)∗ Base-emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 0.5 A
IB = 1 A
hFE∗ DC Current Gain
IC = 1 A
IC = 5 A
IC = 10 A
VCE = 2 V
VCE = 5 V
VCE = 5 V
ft
Transition-Frequency IC = 0.5 A
f = 5 MHz
VCE = 5 V
ton
Turn-on Time
IC = 5 A
VCC = 30 V
ts
Storage Time
tf
Fall Time
IC = 5 A
VCC = 30 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 0.5 A
IB1 = -IB2 = 0.5 A
Min.
100
30
30
20
Typ.
70
Max.
1
1
3
1
0.5
1.5
1.2
1.5
120
0.35
1.3
0.2
Unit
mA
mA
mA
mA
V
V
V
V
V
MHz
µs
µs
µs
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