BDX87C Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDX87C-BDX88C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.45
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
o_C/W
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 100 V
VCB = 100 V
T case = 150 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-emitter
Saturation Voltage
VBE(sat)∗ Base-emitter
Saturation Voltage
VCB = 50 V
VEB = 5 V
IC = 100 mA
IC = 6 A
IC = 12 A
IC = 12 A
IB = 24 mA
IB = 120 mA
IB =120 mA
VBE∗ Base-emitter Voltage IC = 6 A
VCE = 3 V
hFE∗
VF∗
DC Current Gain
Parallel-diode Forward
Voltage
IC = 5 A
IC = 6 A
IC = 12 A
IF = 3 A
IF = 8 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
hfe∗ Small SignalCurrent
Gain
IC = 5 A
f = 1MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 3 V
Min.
100
1000
750
100
Typ.
Max.
0.5
5
1
Unit
mA
mA
mA
1
mA
V
2
V
3
V
4
V
2.8
V
18000
1.8
V
2.5
V
25
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