BDW93CFP Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDW93CFP / BDW94CFP
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
3.8
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
I_CBO
Collector Cut-off
Current (IE = 0)
V_CB = 100 V
VCB = 100 V
Tcase = 150 ^oC
I_CEO
Collector Cut-off
Current (IB = 0)
I_EBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(I_B = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
V_CE = 80 V
V_EB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 5 A
I_C = 10 A
IB = 20 mA
I_B = 100 mA
hFE∗ DC Current G ain
IC = 3 A
I_C = 5 A
IC = 10 A
VCE = 3 V
V_CE = 3 V
VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
Voltage
I_F = 10 A
h_{f e}
Small Signal Current IC = 1 A
Gain
f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
V_CE = 10 V
Min.
100
1000
750
100
20
Typ .
M a x.
100
5
1
Unit
µA
mA
mA
2
mA
V
2
V
3
V
2.5
V
4
V
20000
1.3
2
V
1.8
4
V
Safe Operating Area
2/4