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| BDW93C Datasheet, PDF (2/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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BDW93C/BDW94B/BDW94C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
1.56
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
P ar am et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BDW94B
for BDW93C/94C
Tcase = 150 oC
for BDW94B
for BDW93C/94C
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BDW94B
for BDW93C/94C
VCE = 80 V
VCE = 100 V
IEBO Emitter Cut-of f Current
(IC = 0)
VCEO(s us)â Collector-Emitt er
Sustaining Voltage
(IB = 0)
VEB = 5 V
IC = 100 mA
for BDW94B
for BDW93C/94C
VCE(sat)â Collector-Emitt er
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
V BE(s a t)â
hFEâ
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 5 A
IC = 10 A
IC = 3 A
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
VCE = 3 V
VCE = 3 V
VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
V ol ta ge
IF = 10 A
hfe
Small Signal Current IC = 1 A
Gain
f = 1 MHz
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 10 V
Min. Typ.
80
100
1000
750
100
1.3
1.8
20
Max.
100
100
5
5
1
1
2
2
3
2.5
4
20K
2
4
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
2/6
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