BCP52 Datasheet, PDF (2/4 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

BCP52/53
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-tab • Thermal Resistance Junction-Collecor Tab
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Max
Max
62.5
8
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
V(BR)CBO
Collector Cut-off
Current (IE = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
VCB = -30 V
VCB = -30 V
IC = -100 µA
for BCP52
for BCP53
Tj = 125 ^oC
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -20 mA
for BCP52
for BCP53
V(BR)CER
V(BR)EBO
VCE(sat)∗
Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IC = -100 µA
for BCP52
for BCP53
IC = -10 µA
IC = -500 mA IB = -50 mA
VBE(on)∗
hFE∗
Base-Emitter On
Voltage
DC Current Gain
IC = -500 mA VCE = -2 V
IC = -5 mA
IC = -150 mA
IC = -150 mA
IC = -150 mA
IC = -500 mA
VCE = -2 V
VCE = -2 V for Gr. 6
VCE = -2 V for Gr. 10
VCE = -2 V for Gr. 16
VCE = -2 V
fT
Transition Frequency IC = -10 mA VCE = -5 V f = 35 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-60
-100
-60
-80
-60
-100
-5
25
40
63
100
25
Typ.
50
Max.
-100
-10
-0.5
-1
100
160
250
Unit
nA
µA
V
V
V
V
V
V
V
V
V
MHz
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