BCP52-16 Datasheet, PDF (2/4 Pages) STMicroelectronics – LOW POWER PNP TRANSISTOR

BCP52-16
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm²
Max
89.3
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 125 ^oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CER
Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -100 µA
IC = -20 mA
IC = -100 µA
IE = -10 µA
IC = -500 mA IB = -50 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = -500 mA VCE = -2 V
hFE∗ DC Current Gain
IC = -5 mA
IC = -150 mA
IC = -500 mA
VCE = -2 V
VCE = -2 V
VCE = -2 V
fT
Transition Frequency IC = -10 mA VCE = -5 V f = 20 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-60
-60
-60
-5
40
100
25
Typ.
50
Max.
-100
-10
-0.5
-1
250
Unit
nA
µA
V
V
V
V
V
V
MHz
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