BC857 Datasheet, PDF (2/5 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS

BC857/BC858
THERMAL DATA
R_thj-amb • Thermal Resistance Junction-Ambient
R_{th j-SR} • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max
420
Max
330
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (I_E = 0)
VCE = -30 V
V_CE = -30 V T_{a mb} = 150 ^oC
V(BR)CES ∗ Collect or-Emitter
Breakdown Voltage
(VBE = 0)
IC = -10 µA
for BC857
for BC858
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA
for BC857
for BC858
V_{( BR)CEO} ∗ Collect or-Emitter
Breakdown Voltage
(I_B = 0)
V_(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
V_CE(sat)∗ Collect or-Emitter
Saturation Voltage
I_C = -2 mA
for BC857
for BC858
I_C = -10 µA
for BC857
for BC858
I_C = -10 mA
IC = -100 mA
I_B = -0.5 mA
IB = -5 mA
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = -10 mA I_B = -0.5 mA
IC = -100 mA IB = -5 mA
VBE(on)∗ Base-Emitt er O n
Voltage
IC = -2 mA VCE = -5 V
I_C = -10 mA V_CE = -5 V
hFE DC Current G ain
IC = -10 µA
for group A
for group B
I_C = -2 mA
for group A
for group B
VCE = -5 V
V_CE = -5 V
f_T
Transit ion F requency I_C = -10 mA V_CE = -5 V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
NF Noise Figure
VCE = -5 V IC = -0.2 mA f = 1KHz
∆f = 200 Hz R_G = 2 KΩ
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
-50
-30
-50
-30
-45
-30
-6
-5
-0.6
110
200
Typ .
-0.09
-0.25
-0.75
-0.9
-0.66
-0.72
90
150
180
290
150
2
1.2
M a x.
-15
-5
-0.3
-0.65
-0.75
-0.82
220
450
6
10
4
Unit
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
dB
dB
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