BC394 Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE AMPLIFIER

BC394
THERMAL DATA
R_{t h j-c ase} Thermal Resistance Junction-case
R _{th j-amb} Thermal Resistance Junction-ambient
Max
125
Max
440
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T _amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
I_{CB O}
Collector Cutoff Current
(I_E = 0)
V_CB = 100 V
V_CB = 100 V T _amb = 150 °C
V_{( BR) CBO} Collector-base Breakdown
Voltage (I_E = 0 )
I_C = 100 µA
180
V_{(BR) CEO} * Collector-emitter Breakdown
Voltage (I_B = 0 )
I_C = 10 mA
180
V_{( BR) EBO} Emitter-base Breakdown
Voltage (I_C = 0 )
I_E = 100 µA
6
V_{CE (s at ) *} Collector-emitter Saturation
Voltage
I_C = 10 mA I_B = 1 mA
200
I_C = 50 mA I_B = 5 mA
400
V_{BE ( sat) *} Base-emitter Saturation
Voltage
I_C = 10 mA I_B = 1 mA
750
I_C = 50 mA I_B = 5 mA
850
h _{F E} * DC Curent Gain
I_C = 1 mA
I_C = 10 mA
V_CE = 10 V
V_CE = 10 V
85
30
100
f_T
Transition frequency
I _C = 10 mA V_CE = 10 V
50
95
C _CBO
Collector-base
Capacitance
I_E = 0
V_CB = 10 V
f = 1 MHz
5
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Max.
50
50
300
900
DC Current.
Collector-emitter Saturation Voltage.
Unit
nA
µA
V
V
V
mV
mV
mV
mV
MHz
pF
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