BC393 Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE AMPLIFIER

BC393
THERMAL DATA
R_{th j-cas e} Thermal Resistance Junction-case
R _{th j-amb} Thermal Resistance Junction-ambient
Max
125
Max
440
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T _amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
I_{CB O}
Collector Cutoff Current
(I_E = 0)
V_{(BR) CBO}
V_{(BR) CEO}*
V_{(BR) EBO}
V _{CE (s at ) *}
Collector-base Breakdown
Voltage (I_E = 0 )
Collector-emitter Breakdown
Voltage (I_B = 0 )
Emiter-base Breakdown
Voltage (I_C = 0 )
Collector-emitter Saturation
Voltage
V_{BE ( sat) *} Base-emitter Saturation
Voltage
h _{F E} * DC Curent Gain
f_T
C _CBO
Transition frequency
Collector-base
Capacitance
V_CB = – 100 V
V_CB = – 100 V T _amb = 150 °C
I_C = – 10 µA
I_C = – 2 mA
I_E = – 10 µA
I_C = – 10 mA I_B = – 1 mA
I_C = – 50 mA I_B = – 5 mA
I_C = – 10 mA
I_C = – 50 mA
I_C = – 1 mA
I_C = – 10 mA
I _C = – 10 mA
I_B = – 1 mA
I_B = – 5 mA
V_CE = – 10 V
V_CE = – 10 V
V_CE = – 10 V
I_E = 0
f = 1 MHz
V_CB = – 10 V
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Min. Typ. Max.
50
50
– 180
– 180
–6
– 100 – 300
– 230
– 750 – 900
– 850
85
50
100
50
95
4
7
DC Current Gain.
Collector-emitter Saturation Voltage.
Unit
nA
µA
V
V
V
mV
mV
mV
mV
MHz
pF
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