BC177 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistor

BC177
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-Case
R_{thj- amb} Thermal Resistance Junction-Ambient
Max
200
Max
500
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (V_BE = 0)
V(BR)CES
Co lle ct or- Em it t er
Breakdown Voltage
(VBE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(I_B = 0)
V_(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
V_BE(on)∗ Base-Emitt er O n
Voltage
hfe∗ Small Signal Current
Gain
VCE =-20 V
V_CE =-20 V
IC = -10 µA
T_amb = 150 ^oC
IC = -2 mA
I_E = -10 µA
IC = -10 mA
I_C = -100 mA
I_C = -10 mA
IC = -100 mA
I_C = -2 mA
IB = -0.5 mA
I_B = -5 mA
I_B = -0.5 mA
IB = -5 mA
V_CE = -5 V
IC = -2 mA
Gr. A
Gr. B
VCE = -5 V
f = 1KHz
f_T
Transit ion F requency I_C = -10 mA V_CE = -5 V f = 100 MHz
CCBO
Collector Base
Capacitance
IE = 0 VCB = -10 V
NF Noise Figure
h_ie
Input Impedance
IC = -0.2 mA VCE = -5 V
f = 1KHz R_g = 2KΩ B = 200Hz
I_C = -2 mA
Gr. A
Gr. B
V_CE = -5 V f = 1KHz
hre
Reverse Voltage Ratio IC = -2 mA VCE = -5 V f = 1KHz
Gr. A
Gr. B
h_oe Output Admittance
I_C = -2 mA
Gr. A
Gr. B
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
V_CE = -5 V f = 1KHz
Min.
-50
-45
-5
-55 0
Typ .
-1
-75
-200
-720
-860
-640
125
240
200
5
2
2.7
5.2
2.7
4.5
25
35
M a x.
-100
-10
-250
-750
260
500
10
Unit
nA
µA
V
V
V
mV
mV
mV
mV
mV
MHz
pF
dB
KΩ
KΩ
10^-4
10^-4
µS
µS
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