BC141-16 Datasheet, PDF (2/5 Pages) STMicroelectronics – GENERAL PURPOSE TRANSISTOR

BC141-16
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
35
200
Max
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 60 V
VCE = 60 V TC = 150 ^oC
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO∗ Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 100 µA
IC = 30 mA
IE = 100 µA
IC = 100 mA
IC = 500 mA
IC = 1 A
IB = 10 mA
IB = 50 mA
IB = 100 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = 1 A
VCE = 1 V
hFE∗
fT
DC Current Gain
Transition Frequency
IC = 100 µA
IC = 100 mA
IC = 1 A
IC = 50 mA
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 10 V
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 5 V f = 1MHz
ton
Turn-on Time
IC = 100 mA
IB1 = 5 mA
toff
Turn-off Time
IC = 100 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
IB1 = IB2 = 5 mA
Min. Typ.
100
60
7
0.1
0.35
0.6
1.25
90
100 160
30
50
12
Max.
100
100
1
1.8
250
25
250
850
Unit
nA
µA
V
V
V
V
V
V
V
MHz
pF
ns
ns
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