80810 Datasheet, PDF (2/7 Pages) STMicroelectronics – 40A TRIACS

BTA40, BTA41 and BTB41 Series
Table 3: Absolute Maximum Ratings
Symbol
Parameter
I_T(RMS)
RMS on-state current
(full sine wave)
RD91 / TOP3
TOP Ins.
I_TSM
Non repetitive surge peak on-state ^{F = 50 Hz}
current (full cycle, T_j initial = 25°C) _{F = 60 Hz}
I^²t
dI/dt
I^²t Value for fusing
Critical rate of rise of on-state cur-
rent I_G = 2 x I_GT , t_r ≤ 100 ns
t_p = 10 ms
F = 120 Hz
V_DSM/V_RSM
Non repetitive surge peak off-state
voltage
t_p = 10 ms
I_GM
P_G(AV)
T_stg
T_j
Peak gate current
Average gate power dissipation
t_p = 20 µs
Storage junction temperature range
Operating junction temperature range
T_c = 95°C
T_c = 80°C
t = 20 ms
t = 16.7 ms
Value
40
400
420
880
Unit
A
A
A^²s
T_j = 125°C
50
A/µs
T_j = 25°C
V_DSM/V_RSM
+ 100
V
T_j = 125°C
8
A
T_j = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Tables 4: Electrical Characteristics (T_j = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
I_GT (1)
V_GT
V_D = 12 V
R_L = 33 Ω
I - II - III
IV
ALL
MAX.
MAX.
V_GD V_D = V_DRM R_L = 3.3 kΩ T_j = 125°C
ALL
MIN.
I_H (2) I_T = 500 mA
MAX.
I_L
I_G = 1.2 I_GT
I - III - IV
II
MAX.
dV/dt (2) V_D = 67 %V_DRM gate open
T_j = 125°C MIN.
(dV/dt)c (2) (dI/dt)c = 20 A/ms
T_j = 125°C MIN.
Value
50
100
1.3
0.2
80
70
160
500
10
Unit
mA
V
V
mA
mA
V/µs
V/µs
Table 5: Static Characteristics
Symbol
Test Conditions
V_T (2) I_TM = 60 A t_p = 380 µs
T_j = 25°C
V_t0 (2) Threshold voltage
T_j = 125°C
R_d (2) Dynamic resistance
T_j = 125°C
I_DRM
I_RRM
V_DRM = V_RRM
T_j = 25°C
T_j = 125°C
Note 1: minimum I_GT is guaranted at 5% of I_GT max.
Note 2: for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.55
V
0.85
V
10
mΩ
5
µA
5
mA
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