2N5191 Datasheet, PDF (2/4 Pages) ON Semiconductor – POWER TRANSISTORS SILICON NPN

2N5191 / 2N5192
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.12
100
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = rated VCBO
ICEX
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO Tc = 125 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE = rated VCEO
VEB = 5 V
IC = 100 mA
for 2N5191
for 2N5192
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 1.5 A
IC = 4 A
IB = 0.15 A
IB = 1 A
VBE∗ Base-Emitter Voltage IC = 1.5 A
VCE = 2 V
hFE∗ DC Current Gain
IC = 1.5 A
for 2N5191
for 2N5192
IC = 4 A
for 2N5191
for 2N5192
VCE = 2 V
VCE = 2 V
fT
Transition frequency IC = 1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 10 V
Min. Typ.
60
80
25
20
10
7
2
Max.
0.1
0.1
2
1
1
0.6
1.4
1.2
100
80
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
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