2N5038 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)

2N5038
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.25
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
ICEV
Parameter
Collector Cut-off
Current (VBE = -1.5V)
Test Conditions
VCE = 140 V
VCE = 100 V Tc = 150 ^oC
Min. Typ.
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 70 V
IEBO
Emitter Cut-off Current VEB = 7 V
(IC = 0)
VEB = 5 V
VCEO(sus)∗ Collector-Emitter
IC = 0.2 A
90
Sustaining Voltage
VCER(sus)∗ Collector-Emitter
IC = 0.2 A RBE = 50 Ω
110
Sustaining Voltage
VCEX(sus)∗ Collector-Emitter
Sustaining Voltage
IC = 0.2 A RBE = 100 Ω VBE =-1.5V 150
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 12 A IB = 1.2 A
IC = 20 A IB = 5 A
VBE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 20 A IB = 5 A
VBE∗ Base-Emitter Voltage IC = 12 A VCE = 5 V
hFE∗ DC Current Gain
IC = 2 A VCE = 5 V
50
IC = 12 A VCE = 5 V
20
hfe
Small Signal Current IC = 2 A VCE = 10 V f = 5 MHz
12
Gain
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1 MHz
tr
Rise Time
IC = 12 A VCC = 30 V
IB1 = -IB2 = 1.2A
ts
Storage Time
Max.
50
10
20
50
5
1
2.5
3.3
1.8
250
100
300
0.5
1.5
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
pF
µs
µs
tf
Fall Time
0.5
µs
Is/b∗∗
Second Breakdown
Collector Current
VCE = 28 V
VCE = 45 V
5
A
0.9
A
Es/b Second Breakdown
VBE = -4 V RBE = 20 Ω L = 180µH
13
mJ
Energy
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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