2N4036 Datasheet, PDF (2/5 Pages) Motorola, Inc – CASE 79.04, STYLE 1 TO-39 (TO-205AD)

2N4036
THERMAL DATA
R_{th j-cas e} Thermal Resistance Junction-case
R _{th j-amb} Thermal Resistance Junction-ambient
Max
25
°C/W
Max
175
°C/W
ELECTRICAL CHARACTERISTICS (T _amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
I_CBO
I_CEO
I_EBO
V( _{BR)CB O}
V_{( B R) CE X} *
V_{(BR)CE R}*
V_{(BR)CE O} *
V_{(B R)E BO}
V_{CE( sat )}*
V_{B E} *
h_FE*
Collector Cutoff Current
(I_E = 0)
Collector Cutoff Current
(I_B = 0)
Emitter Cutoff Current
(I_C = 0)
Collector-base Breakdown
Voltage (I_E = 0)
Collector-emitter Breakdown
Voltage (V_BE = 1.5 V)
Collector-emitter Breakdown
Voltage (R _BE = 200 Ω)
Collector-emitter Breakdown
Voltage (I_B = 0)
Emitter-base Breakdown Voltage
(I_C = 0)
Collector-emitter Saturation
Voltage
Base-emitter Voltage
DC Current Gain
f_T
Transition Frequency
V_CB = – 60 V
V_CE = – 30 V
V_EB = – 5 V
I_C = – 100 µA
I_C = – 10 mA
I_C = – 10 mA
I_C = – 10 mA
I_E = – 100 µA
I_C = – 150 mA
I_C = – 150 mA
I_C = – 0.1 mA
I_C = – 150 mA
I_C = – 500 mA
I _C = – 50 mA
f = 20 MHz
I_B = – 15 mA
V_CE = – 10 V
V_CE = – 10 V
V_CE = – 10 V
V_CE = – 10 V
V_CE = – 10 V
– 90
– 85
– 85
– 65
–7
20
40
20
60
C _EBO Emitter-base Capacitance
I_C = 0
f = 1 MHz
V_{E B} = – 0.5 V
C _CBO Collector-base Capacitance
I_E = 0
f = 1 MHz
V_CB = – 10 V
t_{o n}**
Turn-on Time
I _C = – 150 mA V_CC = – 30V
I _B1 = – 15 mA
t_{o f f}**
Turn-off Time
I _C = – 150 mA V_CC = – 30 V
I _B1 = – I _B2 = – 15 mA
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
Typ. Max. Unit
– 20 nA
– 0.5 µA
– 20 nA
V
V
V
V
V
– 0.65 V
– 1.1 V
140
MHz
pF
90
pF
30
ns
110
ns
700
2/5