2N4033 Datasheet, PDF (2/6 Pages) STMicroelectronics – GENERAL PURPOSE AMPLIFIER AND SWITCH

2N4033
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-Case
R_{thj- amb} Thermal Resistance Junction-Ambient
Max
44
Max
218
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (I_E = 0)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(I_B = 0)
V_(BR)EBO ∗ Emitt er-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
h_FE∗ DC Current G ain
VCE = -60 V
V_CE = -60 V
IC = -10 µA
T_amb = 150 ^oC
IC = -10 mA
I_E = -10 µA
IC = -150 mA
I_C = -500 mA
I_C = -150 mA
IC = -500 mA
I_C = -100 µA
I_C = -100 mA
I_C = -500 mA
I_C = -1 A
IC = -100 mA
T_amb = -55 ^oC
IB = -15 mA
I_B = -50 mA
I_B = -15 mA
IB = -50 mA
V_CE = -5 V
V_CE = -5 V
V_CE = -5 V
V_CE = -5 V
VCE = -5 V
fT
Transit ion F requency IC = -50 mA VCE = -10 V
f = 100 MHz
CEBO
Emitter Base
Capacitance
IE = 0 VEB = -0.5 V f = 1MHz
C_CBO
Collector Base
Capacitance
I_E = 0 V_CB = -10 V f = 1MHz
ts∗∗ Storage Time
IC = -500 mA VCE = -30 V
IB1 = -IB2 = -50 mA
t_f∗∗ Fall Time
I_C = -500 mA V_CE = -30 V
IB1 = -IB2 = -50 mA
ton∗∗ Turn-on T ime
IC = -500 mA VCE = -30 V
I_B1 = -I_B2 = -50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See Test Circuit
Min. Typ.
-80
-80
-5
75
100
70
25
40
150
M a x.
-50
-50
-0.15
-0.5
-0.9
-1.1
300
500
110
20
350
50
100
Unit
nA
µA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
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