2N3771 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(150W)

2N3771/2N3772
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.17
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV Collector Cut-off
for 2N3771 VCB = 50 V
Current (VBE = -1.5V) for 2N3772 VCB = 100 V
for all
VCB = 30 V Tj = 150 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
for 2N3771 VCB = 30 V
for 2N3772 VCB = 50 V
ICBO
Collector Cut-off
Current (IE = 0)
for 2N3771 VCB = 50 V
for 2N3772 VCB = 100 V
IEBO
Emitter Cut-off Current for 2N3771 VCB = 5 V
(IC = 0)
for 2N3772 VCB = 7 V
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
for 2N3771
for 2N3772
VCEV(sus)∗ Collector-Emitter
Sustaining Voltage
(VEB = -1.5V)
IC = 0.2 A RBE = 100 Ω
for 2N3771
for 2N3772
VCER(sus)∗ Collector-Emitter
Sustaining Voltage
(RBE = 100 Ω)
IC = 0.2 A
for 2N3771
for 2N3772
VCE(sat)∗ Collector-Emitter
Saturation Voltage
for 2N3771
IC = 15 A
IC = 30 A
for 2N3772
IC = 10 A
IC = 20 A
IB = 1.5 A
IB = 6 A
IB = 1 A
IB = 4 A
VBE∗
Base-Emitter Voltage
for 2N3771
IC = 15 A
for 2N3772
IC = 10 A
VCE = 4 V
VCE = 4 A
hFE∗ DC Current Gain
for 2N3771
IC = 15 A
IC = 30 A
for 2N3772
IC = 10 A
IC = 20 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
VCE = 4 V
hFE Small Signal Current IC = 1 A VCE = 4 V f = 1 KHz
Gain
fT
Transition frequency IC = 1 A VCE = 4 V f = 50 KHz
Is/b
Second Breakdown
Collector Current
VCE = 25 V t = 1 s (non repetitive)
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
40
60
50
80
45
70
15
5
15
5
40
0.2
6
Typ.
Max.
2
5
10
10
10
4
5
5
5
2
4
1.4
4
2.7
2.7
60
60
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
MHz
A
2/4