245932_10 Datasheet, PDF (2/4 Pages) STMicroelectronics – SMALL SIGNAL NPN TRANSISTOR

2N3019
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
30
187.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 90 V
VCB = 90 V TC = 150 ^oC
IEBO
V(BR)CBO
V(BR)CEO∗
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 µA
IC = 10 mA
IE = 100 µA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 150 mA IB = 15 mA
hFE∗ DC Current Gain
IC = 0.1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 500 mA VCE = 10 V
IC = 1A
VCE = 10 V
IC = 150 mA VCE = 10 V
Tamb = -55 ^oC
hfe∗ Small Signal Current IC = 1 mA VCE = 5 V f = 1KHz
Gain
fT
Transition Frequency IC = 50 mA VCE = 10 V f = 20MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
IC = 0.1 mA VCE = 10 V
f = 1KHz
Rg = 1KΩ
rbb’ Cb’c Feedback Time
Constant
IC = 10 mA VCE = 10 V f = 4MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Min.
140
80
7
50
90
100
50
15
40
80
100
Typ.
Max.
10
10
10
0.2
0.5
1.1
300
400
12
60
4
400
Unit
nA
µA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
ps
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